Related papers: Integrated high frequency aluminum nitride optomec…
Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
Niobium nitride (NbN) is a useful material for fabricating detectors because of its high critical temperature and relatively high kinetic inductance. In particular, NbN can be used to fabricate nanowire detectors and mm-wave transmission…
On-chip optical resonators have the promise of revolutionizing numerous fields including metrology and sensing; however, their optical losses have always lagged behind their larger discrete resonator counterparts based on crystalline…
Radio-frequency (RF) sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here, the effect of the Al mole fraction x from 0 to 0.56 on the…
We demonstrate wheel-shaped silicon optomechanical resonators for resonant operation in ambient air. The high finesse of optical whispering gallery modes (loaded optical Q factor above 500,000) allows for efficient transduction of the wheel…
Atomic layer deposition (ALD), a layer-by-layer controlled method to synthesize ultrathin materials, provides various merits over other techniques such as precise thickness control, large area scalability and excellent conformality. Here we…
Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise…
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with…
Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al)…
In recent years, aluminum nitride (AlN) has emerged as an attractive material for integrated photonics due to its low propagation losses, wide transparency window, and presence of both second- and third-order optical nonlinearities.…
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the…
We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances.…
High quality factor ($Q$) nanomechanical resonators have received a lot of attention for sensor applications with unprecedented sensitivity. Despite the large interest, few investigations into the frequency stability of high-$Q$ resonators…
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have…
On-chip actuation and readout of mechanical motion is key to characterize mechanical resonators and exploit them for new applications. We capacitively couple a silicon nitride membrane to an off resonant radio-frequency cavity formed by a…
The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with…
The quantum excitations of macroscopic surface acoustic waves (SAWs) have been tailored to control, communicate and transduce stationary and flying quantum states. However, the limited lifetime of this hybrid quantum systems remains…
Tight confinement of light in photonic cavities provides an efficient template for the realization of high optical intensity with strong field gradients. Here we present such a nanoscale resonator device based on a one-dimensional photonic…
Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and…