Related papers: Universality in Shape Evolution of Si$_{1-x}$Ge$_{…
The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature…
In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal…
Surface reconstructions can drastically modify growth kinetics during initial stages of epitaxial growth as well as during the process of surface equilibration after termination of growth. We investigate the effect of activation barriers…
We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape…
We establish quantitative spherical shape theorems for rotor-router aggregation and abelian sandpile growth on the graphical Sierpinski gasket ($SG$) when particles are launched from the corner vertex. In particular, the abelian sandpile…
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very…
The universal building block which is an essential part of all atomic structures on (1 1 0) silicon and germanium surfaces and their vicinals is proposed from first-principles calculations and a comparison of results with available…
Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of…
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly…
Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy…
Statistical behavior and scaling properties of iso-height lines in three different saturated two-dimensional grown surfaces with controversial universality classes are investigated using ideas from Schramm-Loewner evolution (SLE$_\kappa$).…
In the past many papers have appeared which simulated surface growth with different growth models. The results showed that, if models differed only slightly in their `growth' rules, the resulting surfaces may belong to different…
We show numerically that the roughness and growth exponents of a wide range of rough surfaces, such as random deposition with relaxation (RDR), ballistic deposition (BD) and restricted solid-on-solid model (RSOS), are independent of the…
We investigate the scaling properties of the interface fluctuation width for the $Q$-mer and $Q$-particle-correlated deposition-evaporation models. These models are constrained with a global conservation law that the particle number at each…
Deposition/removal of metal atoms on the hex reconstructed (100) surface of Au, Pt and Ir should present intriguing aspects, since a new island implies hex -> square deconstruction of the substrate, and a new crater the square -> hex…
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of…
Recent experiments show that the islanding behavior during chemical vapor deposition (CVD) of Si on Si(111) using disilane (Si${_2}$H${_6}$) is quite different from that due to molecular beam epitaxy (MBE). While the latter can be…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying…
As a fluid object breaks, it often leaves behind satellite fragments. Here we show that satellite formation can follow universal dynamics, leading to robust satellite sizes. Specifically, we consider the breakup of a slowly stretched fluid…