Related papers: Polarization Response in InAs Quantum Dots: Theore…

A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as…

The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…

Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer…

The demonstration of isotropic polarization response from semiconductor quantum dots (QDs) is a crucial step towards the design of several optoelectronic technologies. Among many parameters that impact the degree of polarization (DOP) of a…

Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of…

This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…

Multi-million atom simulations are performed to study stacking-angle ($\theta$) dependent strain profiles, electronic structure, and polarization-resolved optical modes from [110]-tilted quantum dot stacks (QDSs). Our calculations reveal…

We theoretically study the optical properties of an InAs/GaAs quantum dot (QD) near the area of the second-order resonance between an electron confined in the QD and two longitudinal optical phonons. We present the absorption spectra of an…

The paper aims to reveal the relationship between the geometrical features and linear and nonlinear optical properties of InAs quantum dots (QDs). This problem is justified by the extreme variety offered by the recent advances in growth…

We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…

In core/shell quantum dots (QDs), the interface between semiconductors of different chemical character largely determines their optoelectronic properties. In III-V/II-VI systems, this boundary involves pronounced chemical and electronic…

This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two…

InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore,…

We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and…

Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index…

A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a…

Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of…

We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs).…

We present a comprehensive study of quantum dot (QD) coupling to various phononic modes in a phononic waveguide, combining multiband kp and configuration-interaction (CI) QD state simulations with finite-element waveguide mode modeling. We…

A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate…