Related papers: Precision quantization of Hall resistance in trans…
We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the…
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the…
In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss…
We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling…
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…
We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular…
Precision measurements of the quantum Hall resistance with alternating current (ac) in the kHz range were performed on epitaxial graphene in order to assess its suitability as a quantum standard of impedance. The quantum Hall plateaus…
The history of quantum Hall standards stretches several decades and mostly begins with the use of GaAs given that 2D electron systems exhibit interesting quantum phenomena. At the end 2000s, research in 2D materials like graphene became…
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…
We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise…
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at…
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 {\deg}C). The precise quantized Hall resistance of Rxy =…
Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator…
Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible…
Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J. R. Williams \textit{et al.}, Science…
The quantum Hall effect (QHE) is a cornerstone in the new International System of Units (SI), wherein the base units are derived from seven fundamental constants such as Planck's constant h and elementary charge e. Graphene has…
Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate to another desired substrate. This key step for device…
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative…
In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts.…
We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2}…