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The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…

Materials Science · Physics 2013-09-03 K. C. Yung , W. M. Wu , M. P. Pierpoint , F. V. Kusmartsev

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…

Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in…

Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene…

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective…

Discoveries of graphene and graphane possessing unique electronic and magnetic properties offer a bright future for carbon based electronics, with future prospects of superseding silicon in the semiconductor industry.

Materials Science · Physics 2015-03-13 Julia Berashevich , Tapash Chakraborty

This review on graphene, a one atom thick, two-dimensional sheet of carbon atoms, starts with a general description of the graphene electronic structure as well as a basic experimental toolkit for identifying and handling this material.…

Materials Science · Physics 2010-11-22 Caterina Soldano , Ather Mahmood , Erik Dujardin

We use scanning tunneling microscopy and spectroscopy to study epitaxial graphene grown on a C-face 4H-SiC(000-1) substrate. The results reveal amazing nano-objects at the graphene/SiC interface leading to electronic interface states. Their…

Mesoscale and Nanoscale Physics · Physics 2009-11-12 S. Vizzini , H. Enriquez , S. Chiang , H. Oughaddou , P. Soukiassian

Graphene- the wonder material has attracted a great deal of attention from varied fields of condensed matter physics, materials science and chemistry in recent times. Its 2D atomic layer structure and unique electronic band structure makes…

Materials Science · Physics 2011-08-23 Deep Jariwala , Anchal Srivastava , Pulickel Ajayan

This article reviews silicene, a relatively new allotrope of silicon, which can also be viewed as the silicon version of graphene. Graphene is a two-dimensional material with unique electronic properties qualitatively different from those…

Materials Science · Physics 2014-04-24 L. C. Lew Yan Voon , G. G. Guzmán-Verri

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…

Materials Science · Physics 2008-09-10 Jian-Hao Chen , Masa Ishigami , Chaun Jang , Daniel R. Hines , Michael S. Fuhrer , Ellen D. Williams

We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a…

Materials Science · Physics 2020-06-02 Naili Yue , Joshua Myers , Liqin Su , Wentao Wang , Fude Liu , Raphael Tsu , Yan Zhuang , Yong Zhang

The scientific community has witnessed an exponential increase in the applications of graphene and graphene-based materials in a wide range of fields. For what concerns neuroscience, the interest raised by these materials is two-fold. On…

The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) is much different than growth on the C-terminated…

In this document we explore graphene, a two-dimensional material with remarkable properties. We center our discussion around its electronic characteristics and their applications. We begin by giving a simple electronic model which will then…

Mesoscale and Nanoscale Physics · Physics 2024-02-02 Anthony Gerges Geha , Yago aguado , Modou B. Nadiaye

Single layers of carbon dubbed "graphenes", from which graphite is built, have attracted broad interest in the scientific community because of recent exciting experimental results. Graphene is interesting from a fundamental research…

Materials Science · Physics 2008-01-05 Yakov Kopelevich , Pablo Esquinazi

Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by…

Materials Science · Physics 2015-05-13 L. Magaud , F. Hiebel , F. Varchon , P. Mallet , J. -Y. Veuillen

Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review the recent results on the Raman spectroscopy and imaging of graphene. Raman spectroscopy and…

Materials Science · Physics 2008-10-17 Zhen hua Ni , Ying ying Wang , Ting Yu , Ze xiang Shen

Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing…

Mesoscale and Nanoscale Physics · Physics 2010-09-28 Oleg V. Yazyev , Steven G. Louie

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness.…

Mesoscale and Nanoscale Physics · Physics 2016-08-17 N. -C. Yeh , C. -C. Hsu , M. L. Teague , J. -Q. Wang , D. A. Boyd , C. -C. Chen
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