An epitaxial graphene platform for zero-energy edge state nanoelectronics
Abstract
Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater that the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
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Cite
@article{arxiv.1910.03697,
title = {An epitaxial graphene platform for zero-energy edge state nanoelectronics},
author = {Vladimir S. Prudkovskiy and Yiran Hu and Yue Hu and Kaimin Zhang and Peixuan Ji and Grant Nunn and Jian Zhao and Chenqian Shi and Antonio Tejeda and David Wander and Alessandro De Cecco and Clemens B. Winkelmann and Yuxuan Jiang and Tianhao Zhao and Katsunori Wakabayashi and Zhigang Jiang and Lei Ma and Claire Berger and Walt A. de Heer},
journal= {arXiv preprint arXiv:1910.03697},
year = {2023}
}
Comments
File contains article and supplementary. Nature Communications (in print)