Related papers: What Causes High Resistivity in CdTe
Defects play important roles in semiconductors for optoelectronic applications. Common intuition is that defects with shallow levels act as carrier providers and defects with deep levels are carrier killers. Here, taking the Cu defects in…
Bridgman CdTe and CdZnTe crystal growth, with cadmium vapor pressure control, is applied to production of semiconductor gamma radiation detectors. Crystals are highly donor doped and highly electrically conducting. Annealing in tellurium…
Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed…
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by…
We present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be ~ 0.25 eV, Mg_ 0.45 eV) and less soluble than in GaN; at further variance with GaN,…
P-type doped CdTe free surfaces Schottky contacts, and even interfaces with isostructural p-ZnTe frequently exhibit downward band bending and moderate to high recombination velocities. Fermi level pinning by donor-like states can explain…
The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the…
Controlling doping is essential for a successful integration of semiconductor materials into device technologies. However, the assessment of doping levels and the distribution of charge carriers in carbon nanotubes or other nanoscale…
Undesired unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation energy of a charged defect depends linearly on the Fermi level, doping limits…
CdTe is increasingly being used as the x-ray sensing material in imaging pixel array detectors for x-rays, generally above 20 keV, where silicon sensors become unacceptably transparent. Unfortunately CdTe suffers from polarization, which…
A model based on the alternating structure of the imbedded conduction layers (the Cu-O2 planes) with the charge-transfer-insulator (CTI) layers is proposed. There are three kinds of carriers, each with a different behavior: conduction-like…
In many semiconductors, compensating defects set doping limits, decrease carrier mobility, and reduce minority carrier lifetime thus limiting their utility in devices. Native defects are responsible in many cases, but extrinsic dopants may…
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high…
Understanding competing charge density wave (CDW) orders in the bilayer kagome metal ScV$_6$Sn$_6$ remains challenging. Experimentally, upon cooling, short-range order with wave vector $\mathbf{q}_{2}=(\frac{1}{3},\frac{1}{3},\frac{1}{2})$…
We study metallic behavior and superconductivity in C$_{60}$ materials in terms of a tight binding model characterized by an intramolecular, nonretarded attraction. It was shown previously that, at intermediate coupling, the model possesees…
The attempt to describe the bell-shape dependence of the critical temperature of high-$T_{c}$ superconductors on charge carriers density is made. Its linear increase in the region of small densities (underdoped regime) is proposed to…
Low noise CCDs fully-depleted up to 675 micrometers have been identified as a unique tool for Dark Matter searches and low energy neutrino physics. The charge collection efficiency (CCE) for these detectors is a critical parameter for the…
Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a unique superconducting ground state coexisting with charge-density wave (CDW), whereas how these characteristics are affected by carrier doping remains unexplored because of the lack of an…
The spatially uniform electronic density characteristic of a metal can become unstable at low temperatures, leading to the formation of charge density waves (CDWs). These CDWs, observed in dichalcogenides, cuprates, and pnictides arise from…
We developed a 2-mm-thick CdTe double-sided strip detector (CdTe-DSD) with a 250 um strip pitch, which has high spatial resolution with a uniform large imaging area of 10 cm$^2$ and high energy resolution with high detection efficiency in…