Related papers: Magnetically driven metal-insulator transition in …
Cd2Os2O7 crystallizes in the pyrochlore structure and undergoes a metal-insulator transition (MIT) near 226 K. We have characterized the MIT in Cd2Os2O7 using X-ray diffraction, resistivity at ambient and high pressure, specific heat,…
The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 {\deg}C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction…
SrIrO$_3$ is a metallic complex oxide with unusual electronic and magnetic properties believed to originate from electron correlations due to its proximity to Mott metal-insulator transition. However, the nature of its electronic state and…
Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all…
We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…
The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…
Enhanced coupling of material properties offers new fundamental insights and routes to multifunctional devices. In this context 5d oxides provide new paradigms of cooperative interactions driving novel emergent behavior. This is exemplified…
Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…
The metal-insulator transition (MIT) of V6O11 is studied by means of electronic structure calculations using the augmented spherical wave method. The calculations are based on density functional theory and the local density approximation.…
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…
We formulate a model for magnetic and superconducting ordering at LaAlO3/SrTiO3 interfaces containing both localized magnetic moments and itinerant electrons. Though these both originate in Ti 3d orbitals, the former may be due to electrons…
Metal insulator transitions driven by local Coulomb interactions are among the most fascinating phenomena in condensed matter physics. They occur in a large variety of transition metal compounds. Most of these strongly correlated materials…
The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure,…
Metal to insulator transitions (MITs) driven by strong electronic correlations are common in condensed matter systems, and are associated with some of the most remarkable collective phenomena in solids, including superconductivity and…
Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field…
To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…
We investigate a (semi-)metal to insulator transition (MIT) realized in geometrically frustrated electron systems on the basis of the Hubbard model on a three-dimensional pyrochlore lattice and a two-dimensional checkerboard lattice. Using…
The Mott and the Anderson routes to localization have long been recognized as the two basic processes that can drive the metal-insulator transition (MIT). Theories separately describing each of these mechanisms were discussed long ago, but…
In the absence of magnetic field or spin-orbit coupling the one-parameter scaling theory predicts localization of all states in two-dimensional (2D) disordered systems, for any amount of disorder. However, a 2D metallic phase has been…
More than half a century after first being proposed by Sir Nevill Mott, the deceptively simple question of whether the interaction-driven electronic metal-insulator transition may be continuous remains enigmatic. Recent experiments on…