The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 {\deg}C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically-driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices.
@article{arxiv.1101.3538,
title = {Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films},
author = {Sieu D. Ha and Gulgun H. Aydogdu and Shriram Ramanathan},
journal= {arXiv preprint arXiv:1101.3538},
year = {2013}
}