Related papers: Resistive switching effects on the spatial distrib…
Two-dimensional charge carrier accumulation at oxide heterointerfaces presents a paradigm shift for oxide electronics. Like a capacitor, interfacial charge buildup couples to an electric field across the dielectric medium. To prevent the…
Emergent phenomena at interfaces between oxides and metals can appear due to charge transfer and mass transport that modify the bulk properties. By coating the metallic oxide LaNiO$_3$ by aluminium, we fabricated a junction exhibiting a…
A large number of experimental studies suggest two-terminal resistive switching devices made of a dielectric thin film sandwiched by a pair of electrodes exhibit reversible multi-state switching behaviors; however coherent understanding of…
Metastable superconductivity at 39 - 54 K in the interfaces formed by metallic and oxidized magnesium (MgO) has been observed by ac magnetic susceptibility measurements. The superconducting interfaces have been produced by the surface…
The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the…
We argue that the relative thermal conductance between interfaces with different morphologies is controlled by crystal structure through $M_{min}/M_c > 1$, the ratio between the {\it minimum mode} count on either side $M_{min}$, and the…
Large spin splitting at Rashba interface, giving rise to strong spin-momentum locking, is essential for efficient spin-to-charge conversion. Recently, a Cu/Bismuth oxide (Bi2O3) interface has been found to exhibit an efficient…
Metal to insulator transitions (MITs) driven by strong electronic correlations are common in condensed matter systems, and are associated with some of the most remarkable collective phenomena in solids, including superconductivity and…
The effect of 16O-18O isotope exchange on the electric resistivity was studied for (La(1-y)Pr(y))0.7Ca0.3MnO3 ceramic samples. Depending on y, this mixed perovskite exhibited different types of low-temperature behavior ranging from…
Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays.…
X-ray photoemission spectroscopy has been used to investigate the depth dependent crystal structures and chemical compositions of sequentially chemical-etched YBa2Cu3O7-d (YBCO) ultrathin film superconductors. In the near-interface region…
High-pressure experiments using diamond anvils have revealed novel properties and phase behavior of H2O under extreme conditions. When contained in diamond-anvil cells, the H2O samples are usually in direct contact with the diamond anvil.…
Current-driven insulator-metal transitions are in many cases driven by Joule heating proportional to the square of the applied current. Recent nano-imaging experiments in Ca$_2$RuO$_4$ reveal a metal-insulator phase boundary that depends on…
The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of…
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two…
The superconducting transition in a single overdoped, detwinned YBa2Cu3Ox (YBCO) crystal is studied using four different probes. Whereas the AC and DC magnetic susceptibilities find a dominant transition at 88 K with a smaller effect near…
The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate…
We present first-principles calculations of the structural and electronic properties of Si(001)-SiO2 interfaces. We first arrive at reasonable structures for the c-Si/a-SiO2 interface via a Monte-Carlo simulated annealing applied to an…
We study the proximity-induced superconducting correlations in a normal metal connected to a superconductor when the interface between them is spin-active and the normal metal is ballistic or diffusive. Remarkably, for any interface spin…
The structural, magnetic, and electronic properties of (STO)$_4$/(YTO)$_2$ superlattice consisting of Mott insulator YTiO$_3$ (YTO) and band insulator SrTiO$_3$ (STO) under strain are investigated by the density-functional-theory plus…