Related papers: Characterization of proton irradiated 3D-DDTC pixe…

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel…

This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities…

The traditional characterization of charge transfer inefficiency (CTI) in charge-coupled devices (CCDs) can suffer from a number of deficiencies: CTI is often only calculated for a limited number of signal levels, CTI is calculated from a…

The relaxation dynamics of photoexcited quasiparticles of three-dimensional (3D) Dirac semimetals are vital towards their application in high performance electronic and optoelectronic devices. In this work, the relaxation dynamics of…

In the construction of High-Luminosity Large Hadron Collider (HL-LHC) and Future Circular Collider (FCC) experiments, 3D pixel sensors have become indispensable components due to their superior radiation hardness, fast response, and low…

Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small…

We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin active edge sensor devices,…

Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $\mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si…

We demonstrate the control of electron-electron correlation in frustrated double ionization (FDI) of the two-electron triatomic molecule D$_{3}^{+}$ when driven by two orthogonally polarized two-color laser fields. We employ a…

Pixelated silicon detectors are state-of-the-art technology to achieve precise tracking and vertexing at collider experiments, designed to accurately measure the hit position of incoming particles in high rate and radiation environments.…

We present the results of transverse emittance and longitudinal current profile measurements of high bunch charge (greater than or equal to 100 pC) beams produced in the DC gun-based Cornell Energy Recovery Linac Photoinjector. In…

Nearly complete angular distributions of the two-body deuteron photodisintegration differential cross section have been measured using the CLAS detector and the tagged photon beam at JLab. The data cover photon energies between 0.5 and 3.0…

The High Luminosity upgrade of the CERN Large Hadron Collider will be able to reach a peak instantaneous luminosity of 5E34/cm2 s. The innermost detectors of the CMS and ATLAS experiments will have to cope with unprecedented requirements on…

A proton irradiation site for silicon detectors has been developed and commissioned at the Bonn Isochronous Cyclotron. The accelerator provides 14 MeV proton beams of up to 1 $\mu$A at beam widths of a few mm to the setup. Devices Under…

We are developing position sensitive silicon detectors (PSD) which have an electrode at each of four corners so that the incident position of a charged particle can be obtained using signals from the electrodes. It is expected that the…

The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…

The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses…

The identification of novel multifunctional Dirac materials has been an ongoing effort. In this connection quasi 2-dimensional (BEDT-TTF)-based charge transfer salts are widely discussed. Here, we report about the electronic structure of…

Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and…