Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 μm thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of ϕ∼ 1015 neq/cm2. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.
@article{arxiv.1802.03988,
title = {First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors},
author = {V. Sola and R. Arcidiacono and M. Boscardin and N. Cartiglia and G. -F. Dalla Betta and F. Ficorella and M. Ferrero and M. Mandurrino and L. Pancheri and G. Paternoster and A. Staiano},
journal= {arXiv preprint arXiv:1802.03988},
year = {2018}
}
Comments
16 pages, 13 figures, 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Nuclear Instruments and Methods in Physics Research A (2018)