The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the doping concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C-V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
@article{arxiv.2003.07076,
title = {Experimental Study of Acceptor Removal in UFSD},
author = {Y. Jin and H. Ren and S. Christie and Z. Galloway and C. Gee and C. Labitan and M. Lockerby and F. Martinez-McKinney and S. M. Mazza and R. Padilla and H. F. -W. Sadrozinski and B. Schumm and A. Seiden and M. Wilder and W. Wyatt and Y. Zhao and R. Arcidiacono and N. Cartiglia and M. Ferrero and M. Mandurrino and F. Siviero and V. Sola and M. Tornago and V. Cindro and A. Howard and G. Kramberger and I. Mandić and M. Mikuž},
journal= {arXiv preprint arXiv:2003.07076},
year = {2020}
}
Comments
14 pages, 10 Figs., Sumitted to HSTD12 Hiroshima 2019