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We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ($10^{18}$--$10^{20}$ cm$^{-3}$),…
We present measurements of the electrical resistivity, $\rho$, in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature, $T$. The $\rho(T)$ curves display hysteretic behavior in certain…
In this article we propose and numerically implement a mathematical model for the simulation of three-dimensional semiconductor devices characterized by an heterogeneous material structure. The model consists of a system of nonlinearly…
Germanium quantum well heterostructures have rapidly emerged as a leading platform for solid-state quantum information processing; however, material quality limits scalability, and higher structural quality, higher purity, as well as zero…
We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
A few atomic layers of helium adsorbed on graphite have been attracting much attention as one of the ideal quantum systems in two dimension. Although previous reports on neutron diffraction have shown fundamental structural information in…
Thermal transport properties bear a pivotal role in influencing the performance of phase change memory (PCM) devices, in which the PCM operation involves fast and reversible phase change between amorphous and crystalline phases. In this…
The response of silicon drift detectors (SDDs), which were mounted together with their preamplifiers inside a vacuum chamber, was studied in a temperature range from 100 K to 200 K. In particular, the energy resolution could be stabilized…
The dynamics of the random-phase sine-Gordon model, which describes 2D vortex-glass arrays and crystalline surfaces on disordered substrates, is investigated using the self-consistent Hartree approximation. The fluctuation-dissipation…
The technological prototype of the CALICE highly granular silicon-tungsten electromagnetic calorimeter (SiW-ECAL) was tested in a beam at DESY in 2017. The setup comprised seven layers of silicon sensors. Each layer comprised four sensors,…
The efficiency of energy conversion in thermoelectric generators (TEGs) is directly proportional to electrical conductivity and Seebeck coefficient while inversely to thermal conductivity. The challenge is to optimize these interdependent…
The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong…
The specific contact resistance $\rho_c$ of Cr/p-Hg$_{0.72}$Cd$_{0.28}$Te and Cr/p-CdTe/p-Hg$_{0.72}$Cd$_{0.28}$Te heterointerfaces, which were formed by deposition of Cr films at room temperatures on the surfaces of semiconductors, was…
We use extensive classical molecular dynamics simulations to calculate the thermal conductivity of a model silica glass. Apart from the potential parameters, this is done with no other adjustable quantity and the standard equations of heat…
In this paper we describe a spatial decomposition of the thermal conductivity, what we name "site-projected thermal conductivity", a gauge of the thermal conduction activity at each site. The method is based on the Green-Kubo formula and…
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates were measured with a time-resolved reflectivity (TRR)…
Temperature coefficient of resistance (TCR) of a bolometer can be tuned by modifying the thermal conductance of an absorbing materials since they sense radiations via the temperature change in the absorber. However, the thermal conductance…
Self-heating (SHE) TCAD numerical simulations have been performed, for the first time, on 30nm FDSOI MOS transistors at extremely low temperatures. The self-heating temperature rise dTmax and the thermal resistance Rth are computed as…
The photoacoustic method with piezoelectric detection for the simultaneous evaluation of the thermophysical properties is proposed. The approach is based on the settling of an additional heat sink for redistribution of heat fluxes deposited…