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We present a zinc-blende lattice gas model of II-VI(001) surfaces, which is investigated by means of Kinetic Monte Carlo (KMC) simulations. Anisotropic effective interactions between surface metal atoms allow for the description of, e.g.,…

Materials Science · Physics 2009-11-10 T. Volkmann , M. Ahr , M. Biehl

Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V…

Materials Science · Physics 2019-03-27 Alejandro Vega-Flick , Daehwan Jung , Shengying Yue , John E. Bowers , Bolin Liao

In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 K. Lai , W. Pan , D. C. Tsui , S. Lyon , M. Muhlberger , F. Schaffler

We find that at intermediate temperatures, the metallic temperature dependence of the conductivity \sigma(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)).…

Strongly Correlated Electrons · Physics 2007-05-23 A. A. Shashkin , S. V. Kravchenko , V. T. Dolgopolov , T. M. Klapwijk

Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…

Mesoscale and Nanoscale Physics · Physics 2015-06-15 Xin Ou , Adrian Keller , Manfred Helm , Jürgen Fassbender , Stefan Facsko

The homoepitaxial growth of Si on Si(100) covered by a resist mask is a necessary technological step for the fabrication of donor-based quantum devices with scanning tunneling microscope lithography. In the present work, the chlorine…

Applied Physics · Physics 2019-08-02 T. V. Pavlova , E. S. Skorokhodov , G. M. Zhidomirov , K. N. Eltsov

In this work, both thermal and electrical transport properties of diamond$-$cubic Si (Si$-$I) and metastable R8 phase of Si (Si$-$XII) are comparatively studied by using first$-$principles calculations combined with Boltzmann transport…

Materials Science · Physics 2022-04-27 Yongchao Rao , C. Y. Zhao , Shenghong Ju

Chromatic dispersion and thermal coefficients of 6 hygroscopic liquids: ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, propylene glycol (propane-1,2-diol), and glycerol were measured in the range from 390 to…

The sensitivity of future gravitational wave (GW) observatories will be limited by thermal noise in a wide frequency band. To reduce thermal noise, the European GW observatory Einstein GW Telescope (ET) is suggested to use crystalline…

An innovative path for the detectors at future colliders to achieve higher performances is to use a Particle Flow approach, which requires highly granular calorimeters to image individual showers. The silicon-tungsten electromagnetic…

Instrumentation and Detectors · Physics 2026-05-01 Yukun Shi , Vincent Boudry

The helium I line intensity ratio (LIR) method is used to measure the electron density ($n_e$) and temperature ($T_e$) of fusion-relevant plasmas. Although the collisional-radiative model (CRM) has been used to predict $n_e$ and $T_e$,…

Plasma Physics · Physics 2025-06-26 Shin Kajita

Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…

Materials Science · Physics 2013-10-08 D. Pravarthana , O. I. Lebedev , D. Chateigner , S. Hebert , P. A. Salvador , W. Prellier

For graphene (a Dirac material) it has been theoretically predicted and experimentally observed that DC resistivity is proportional to $ T^4$ when the temperature is much less than Bloch- Gr\"{u}neisen ($\Theta_{BG}$) temperature and T…

Strongly Correlated Electrons · Physics 2016-10-18 Luxmi Rani , Navinder Singh

The optical properties of monocrystalline, intrinsic silicon are of interest for technological applications as well as fundamental studies of atom-surface interactions. For an enhanced understanding, it is of great interest to explore…

Materials Science · Physics 2022-07-26 C. Moore , C. M. Adhikari , T. Das , L. Resch , C. A. Ullrich , U. D. Jentschura

We investigate quantum transport and thermoelectrical properties of a finite-size Su-Schrieffer-Heeger model, a paradigmatic model for a one-dimensional topological insulator, which displays topologically protected edge states. By coupling…

Statistical Mechanics · Physics 2018-07-25 Sina Böhling , Georg Engelhardt , Gloria Platero , Gernot Schaller

Using Terahertz Time-Domain Spectroscopy, we study the temperature-dependent complex optical conductivity of the topological insulator, Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ single-crystal from 5 K to 150 K in the terahertz regime (0.4…

Mesoscale and Nanoscale Physics · Physics 2012-06-07 Chi Sin Tang , Bin Xia , Xingquan Zhou , Jian-Xin Zhu , Lan Wang , Elbert E. M. Chia

By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the…

Materials Science · Physics 2015-05-13 Lihong Shi , Donglai Yao , Gang Zhang , Baowen Li

The lattice thermal conductivity ($\kappa$) of two ceramic materials, cerium dioxide (CeO$_2$) and magnesium oxide (MgO), is computed up to 1500 K using first principles and the phonon Boltzmann Transport Equation (PBTE) and compared to…

We present an ab initio calculation of the DC conductivity of amorphous silicon and hydrogenated amorphous silicon. The Kubo-Greenwood formula is used to obtain the DC conductivity, by thermal averaging over extended dynamical simulation.…

Materials Science · Physics 2009-11-13 T. A. Abtew , M. Zhang , D. A. Drabold

The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered…

Materials Science · Physics 2008-11-20 Nicola Ferralis , Roya Maboudian , Carlo Carraro