Related papers: Single-electron Faraday generator
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…
Tunneling of single electrons has been thoroughly studied both theoretically and experimentally during last ten years. By the present time the basic physics is well understood, and creation of useful single-electron devices becomes the…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
We investigate the transport properties of a new class of ratchets. The device is constructed by applying an ac voltage to the metallic single electron tunneling transistor, and a net transport current is induced by the time-dependent…
We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…
A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
We develop a new approach to electron transport in mesoscopic systems by using a particular single-particle basis. Although this basis generates redundant many-particle amplitudes, it greatly simplifies the treatment. By using our method…
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single electron level we find…
We present a comprehensive investigation of nonequilibrium effects and self heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron may be deposited in…
We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at…
Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
We study peculiarities of transport through a Coulomb blockade system tuned to the vicinity of the spin transition in its ground state. Such transitions can be induced in practice by application of a magnetic field. Tunneling of electrons…
The mechanism of the magneto-Coulomb oscillation in ferromagnetic single electron transistors (SET's) is theoretically considered. Variations in the chemical potentials of the conduction electrons in the ferromagnetic island electrode and…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
A new approach in the quantum theory of few-electron nanoelectronic devices -- the S-matrix approach -- is presented in a simple example: a single-electron transistor consisting of a single-level quantum dot connected with two metallic…