Related papers: A hybrid double-dot in silicon
We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds…
We apply an elementary measurement scheme to calculate the electronic triplet-singlet transition mediated by hyperfine interaction in a double quantum dot. We show how the local character of the hyperfine interaction and the nuclear…
We study transport through a lateral quantum dot in the vicinity of the singlet-triplet transition in its ground state. This transition, being sharp in an isolated dot, is broadened to a crossover by the exchange interaction of the dot…
Few-electron quantum dots are investigated in the regime of strong tunneling to the leads. Inelastic cotunneling is used to measure the two-electron singlet-triplet splitting above and below a magnetic field driven singlet-triplet…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a…
Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at…
The exchange coupling of the spins of two electrons in double well potentials in a semiconductor background is calculated within the Heitler-London (HL) approximation. Atomic and quantum dot types of confining potentials are considered, and…
The conductance through two quantum dots in series is studied using general qualitative arguments and quantitative slave-boson mean-field theory. It is demonstrated that measurements of the conductance can explore the phase diagram of the…
Atomic intercalation in two dimensional (2D) layered materials can engineer the electronic structure at the atomic scale, bringing out tunable physical and chemical properties which are quite distinct in comparison with pristine one. Among…
New advances in single-atom manipulation are leading to the creation of atomic structures on H passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and…
Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous…
We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system (NEMS) to SET…
We examine electronic transport in a spin-blockaded double quantum dot. We show that by tuning the strength of the spin-orbit interaction the current flowing through the double dot exhibits a dip at zero magnetic field or a peak at a…
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
We investigate transport in a three-terminal graphene quantum dot. All nine elements of the conductance matrix have been independently measured. In the Coulomb blockade regime accurate measurements of individual conductance resonances…
Antimonene is a recently discovered two-dimensional semiconductor with exceptional environmental stability, high carrier mobility, and strong spin-orbit interactions. In combination with electric field, the latter provides an additional…
We theoretically study intrinsic superconductivity in doped Dirac semimetals. Dirac semimetals host bulk Dirac points, which are formed by doubly degenerate bands, so the Hamiltonian is described by a $4 \times 4$ matrix and six types of…