Related papers: Energy-band engineering for improved charge retent…

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room…

We report on a numerical investigation in which memory characteristics of double floating-gate (DFG) structure were compared to those of the conventional single floating-gate structure, including an interference effect between two cells. We…

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…

In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron injection is characterized by an applied VDS smaller than…

The same as in microprocessor fabrication, nonvolatile memory devices are facing the problem in device size scaling down, such as large leakage current density. High-k materials are considered to solve it. However, simply replacing low-k to…

A single-electron latch is a device that can be used as a building block for Quantum-dot Cellular Automata (QCA) circuits. It consists of three nanoscale metal "dots" connected in series by tunnel junctions; charging of the dots is…

Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…

We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a…

We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…

We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less…

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated…

We introduce a new functional nanoscale device, a single-electron heat diode, consisting of two quantum dots or metallic islands coupled to electronic reservoirs by tunnel contacts. Electron transport through the system is forbidden but the…

We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semiconductor (MIFIS) structure, derived from the physical…

We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of…

A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…

Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the…

Superconducting electronics represents a promising technology, offering not only efficient integration with quantum computing systems, but also the potential for significant power reduction in high-performance computing. Nonetheless, the…

In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source…

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

The classical two-capacitor paradox of the lost energy is revisited from an electronic circuit security stand-point. The paradox has been solved previously by various researchers, and the energy lost during the charging of capacitors has…