Related papers: Effects of Interface Roughness Scattering on Radio…
We have theoretically investigated the influence of interface roughness scattering on the low temperature mobility of electrons in quantum wires when electrons fill one or many subbands. We find the Drude conductance of the wire with length…
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…
The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of…
We analyze the effect of low dimensionality on the electrical conductivity ({\sigma}) and Seebeck coefficient (S) in ultra-narrow Si nanowires (NWs) by employing atomistic considerations for the electronic structures and linearized…
Surface roughness influences significantly the quality factor of high frequency nanoresonators for large frequency - relaxation times within the non-Newtonian regime, where a purely elastic dynamics develops. It is shown that the influence…
We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu$_{60}$Ni$_{40}$ prepared by magnetron sputtering. X-ray and neutron reflectometry show that both…
We study the effect of surface scattering on transport properties in many-mode conducting channels (electron waveguides). Assuming a strong roughness of the surface profiles, we show that there are two independent control parameters that…
Reconfigurable Intelligent Surface (RIS) can create favorable multipath to establish strong links that are useful in millimeter wave (mmWave) communications. While previous works used Rayleigh or Rician fading, we use the fluctuating…
Recent results have shown unprecedented control over separation distances between two metallic elements hundreds of nanometers in size, underlying the effects of free-electron nonlocal response also at mid-infrared wavelengths. Most of…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…
By explicitly considering surface roughness at the atomic level, we quantitatively show that the thermal conductivity of Si nanowires can be lower than Casimir's classical limit. However, this violation only occurs for deep surface…
Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their…
A statistical characterization of the fundamental performance bounds of an intelligent reflective surface (IRS) intended for aiding wireless communications is presented. To this end, the outage probability, average symbol error probability,…
Surface roughness elements are commonly used in wind tunnel testing to hasten the laminar-turbulent transition of the boundary layer in model tests to mimic the aerodynamic effects present in the full-scale application. These devices can…
We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by…
Critical temperature reduction $\Delta T_c$ is considered for a thin film of a layered superconductor (S) with a rough surface covered by a thick layer of a normal metal (N). The roughness of the SN interface increases the penetration of…
The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components…
This paper provides an analysis of radio wave scattering for frequencies ranging from the microwave to the Terahertz band (e.g., 1 GHz - 1 THz), by studying the scattering power reradiated from various types of materials with different…
The effect of phonon scattering by surface roughness on the thermal conductance in mesoscopic systems at low temperatures is calculated using full elasticity theory. The low frequency behavior of the scattering shows novel power law…