We investigate remote surface scattering (RSR) by the SiO2/HfO2 interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO2 and SiO2/HfO2 interfaces. Therefore, surface roughness and remote surface roughness can not be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO2 interface and SiO2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-κ/Metal gate technologies.
Cite
@article{arxiv.1504.01881,
title = {Remote Surface Roughness Scattering in FDSOI devices with high-$\kappa$/SiO$_2$ gate stacks},
author = {Y. M. Niquet and I. Duchemin and V. -H. Nguyen and F. Triozon and D. Rideau},
journal= {arXiv preprint arXiv:1504.01881},
year = {2015}
}