Related papers: Shot noise in magnetic tunnel junctions from first…
In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…
The shot noise of spin polarized electrons is shown to be generically dependent upon spin-flip processes. Such a situation represents perhaps the simplest instance where the two-particle character of current fluctuations out of equilibrium…
The conductance quantization and shot noise below the first conductance plateau $G_0 = 2e^2/h$ are measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we…
We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the…
In this work, we calculate with ab initio methods the current-voltage characteristics for ideal single- and double-barrier Fe/MgO (001) magnetic tunnel junctions. The current is calculated in the phase-coherent limit by using the recently…
The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…
We report the first measurement of the \emph{dynamical response} of shot noise (measured at frequency $\omega$) of a tunnel junction to an ac excitation at frequency $\omega_0$. The experiment is performed in the quantum regime,…
We investigate the transition from sub-Poissonian to super-Poissonian values of the zero-temperature shot noise power of a resonant double barrier of macroscopic cross-section. This transition occurs for driving voltages which are…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
We examine the shot noise spectrum properties of coherent resonant tunneling in coupled quantum dots in both series and parallel arrangements by means of quantum rate equations and MacDonald's formula. Our results show that, for a…
Frequency dependent current noise in ferromagnetic double junctions with Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin polarized…
We report measurements of the bias dependence of the Fano factor in ensembles of atomic-scale Au junctions at 77 K. Previous measurements of shot noise at room temperature and low biases have found good agreement of the Fano factor with the…
We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgO buffered Si (100). Tunnel magnetoresistance reached up to 64% at 4.2 K. An unexpected fast drop of magnetoresistance was recorded for MgO thickness above 1 nm, which is…
We perform a numerical investigation of the effect of the disorder associated with randomly located impurities on shot noise in mesoscopic cavities. We show that such a disorder becomes dominant in determining the noise behavior when the…
We have carried out numerical simulations of shot noise in 2D arrays of single-electron islands with random background charges. The results show that in contrast with the 1D arrays, at low currents the current noise is strongly colored, and…
Using the closed-time path integral approach, we nonperturbatively study inelastic tunneling of electrons via magnetic impurities in the barrier accompanied by phonon emission in a magnetic tunnel junction. The spectrum density of phonon…
We study quantum-mechanically the frequency-dependent current noise of a tunnel-junction coupled to a nanomechanical oscillator. The cases of both DC and AC voltage bias are considered, as are the effects of intrinsic oscillator damping.…
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…