Related papers: Shot noise in magnetic tunnel junctions from first…
We study time-dependent electron transport and quantum noise in a ballistic graphene field effect transistor driven by an ac gate potential. The non-linear response to the ac signal is computed through Floquet theory for scattering states…
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and…
We report our studies of zero-frequency shot noise in tunneling through a parallel-coupled quantum dot interferometer by employing number-resolved quantum rate equations. We show that the combination of quantum interference effect between…
We formulate a theory for shot noise in quantum nanoelectromechanical systems. As a specific example, the theory is applied to a quantum shuttle, and the zero-frequency noise, measured by the Fano factor F, is computed. F reaches very low…
We investigate shot noise at {\it finite temperatures} induced by the quasi-particle tunneling between fractional quantum Hall (FQH) edge states. The resulting Fano factor has the peak structure at a certain bias voltage. Such a structure…
We report first-principles calculations of shot noise properties of parallel carbon wires in the regime in which the interwire distance is much smaller than the inelastic mean free path. We find that, with increasing interwire distance, the…
The shot noise of a one-dimensional wire interrupted by two barriers shows interesting features related to the interplay between Coulomb blockade effects, Luttinger correlations and discrete excitations. At small bias the Fano factor…
The average current and the shot noise at correlated sequential tunneling via two localized sites are studied. At zero temperature the Fano factor averaged over the positions and energies of sites is shown to be 0.707. The noise dependence…
We report the observation of enhanced spin dependent shot noise in magnetic tunnel barriers, suggesting transport through localized states within the barrier. This is supported by the existence of negative magnetoresistance and structure in…
High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several k$\Omega$/$\mu$m$^{2}$. Ohmic…
Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a double barrier setup are typically negative. Here, we investigate the shot noise behavior of a system of two capacitively coupled quantum dot…
Using a large-N theory in combination with the Keldysh non-equilibrium Greens function formalism, we investigate the current, differential conductance, zero-frequency shot-noise and Fano factor as measured by scanning tunneling shot noise…
We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double barrier resonant diodes. Theory applies to the region of low applied voltages up to the…
We study a model of two interacting levels that are attached to two electronic leads, where one of the levels is attached very weakly to the leads. We use rate equations method to calculate the average current and the noise of electrons…
We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage.…
We report on room temperature 1/f noise in fully epitaxial Fe(45nm)/MgO(2.6nm)/Fe(10nm) magnetic tunnel junctions (MTJs) with and without carbon doping of the Fe/MgO bottom interface. We have found that the normalized noise (Hooge factor)…
We study differential shot noise in mesoscopic diffusive normal-superconducting (NS) heterostructures at finite voltages where nonlinear effects due to the superconducting proximity effect arise. A numerical scattering-matrix approach is…
We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency…
Shot noise reduction in quantum wires is interpreted within the model for the ''0.7 structure'' in the conductance of near perfect quantum wires [T. Rejec, A. Ramsak, and J.H. Jefferson, Phys. Rev. B 62, 12985 (2000)]. It is shown how the…
We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The…