Related papers: SiGe/Si quantum dot electron spin decoherence depe…
The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and…
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally…
Strain-induced gradients of local electric fields in semiconductor quantum dots can couple to the quadrupole moments of nuclear spins. We develop a theory describing the influence of this quadrupolar coupling (QC) on the spin correlators of…
We theoretically investigate the spin dynamics of a heavy hole confined to an unstrained III-V semiconductor quantum dot and interacting with a narrowed nuclear-spin bath. We show that band hybridization leads to an exponential decay of…
A successful and promising device for the physical implementation of electron spin-valley based qubits is the Transition Metal Dichalcogenide monolayer (TMD-ML) semiconductor quantum dot. The electron spin in TMD-ML semiconductor quantum…
We report on the 29Si nuclear spin decoherence time at room temperature for a pure (99.99999%, 7N) and carrier-less (p-type, doping level of 10^15cm-3) silicon in which 29Si nuclei are naturally abundant (4.7%). Despite the experimental…
We investigate the coherence properties of individual nuclear spin quantum bits in diamond [Dutt et al., Science, 316, 1312 (2007)] when a proximal electronic spin associated with a nitrogen-vacancy (NV) center is being interrogated by…
We briefly review the physics of gate operations between quantum dot spin-qubits and analyze the dynamics of quantum entanglement in such processes. The indistinguishable character of the electrons whose spins realize the qubits gives rise…
Spin qubits are fundamental building blocks of modern quantum computing devices. The path of Ge-based hole-spin qubits has several advantages over Si-based electron-spin systems, such as the absence of valley band degeneracy, the…
In quantum dots made from materials with nonzero nuclear spins, hyperfine coupling creates a fluctuating effective Zeeman field (Overhauser field) felt by electrons, which can be a dominant source of spin qubit decoherence. We characterize…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
Carbon based systems are prominent candidates for a solid-state spin-qubit due to weak spin-orbit and hyperfine interactions in combination with a low natural abundance of spin carrying isotopes. We consider the effect of the hyperfine…
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing these nuclear spin-full isotopes is essential to extend the…
The spin interaction of a hole confined in a quantum dot with the surrounding nuclei is described in terms of an effective magnetic field. We show that, in contrast to the Fermi contact hyperfine interaction for conduction electrons, the…
Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they…
The dynamics and decoherence of an electronic spin-1/2 qubit coupled to a bath of nuclear spins via hyperfine interactions in a quantum dot is studied. We show how exact results from the integrable solution can be used to understand the…
Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si…
Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin…
We review our investigation of the spin dynamics for two electrons confined to a double quantum dot under the influence of the hyperfine interaction between the electron spins and the surrounding nuclei. Further we propose a scheme to…