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Spin related phenomena in quantum nanostructures have attracted recently much interest due to fast growing field of spintronics. In particular complex nanostructures are important as they provide a versatile system to manipulate spin and…
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows…
The characterization of nuclear spin environments in solid-state devices plays an important role in advancing quantum technologies, yet traditional methods often demand long measurement times. To address this challenge, we integrate…
Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…
In semiconductor quantum dots, the electron hyperfine interaction with the nuclear spin bath is the leading source of spin decoherence at cryogenic temperature. Using high-resolution two-color differential transmission spectroscopy, we…
Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…
Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with…
We consider two qubits interacting by means of an optical cavity, where each qubit is represented by a single electron spin confined to a quantum dot. It is known that electron spins in III-V semiconductor quantum dots are affected by the…
A simplified Heisenberg spin model is studied in order to examine the idea of decoherence in closed quantum systems. For this purpose, we present a quantifiable definition to quantum coherence $\Xi$, and discuss in some detail a general…
The central spin decoherence problem has been researched for over 50 years in the context of both nuclear magnetic resonance and electron spin resonance. Until recently, theoretical models have employed phenomenological stochastic…
We discuss decoherence in discrete-time quantum walks in terms of a phenomenological model that distinguishes spin and spatial decoherence. We identify the dominating mechanisms that affect quantum walk experiments realized with neutral…
Understanding and protecting the coherence of individual quantum systems is a central challenge in quantum science and technology. Over the last decades, a rich variety of methods to extend coherence have been developed. A complementary…
We present an investigation of the electron spin dynamics in an ensemble of singly-charged quantum dots subject to an external magnetic field and laser pumping with circularly polarized light. The spectral laser width is tailored such that…
The interaction between a central qubit spin and a surrounding bath of spins is critical to spin-based solid state quantum sensing and quantum information processing. Spin-bath interactions are typically strongly anisotropic, and rapid…
We investigate the dynamic nuclear polarization process by frequently injecting polarized electron spins into a quantum dot. Due to the suppression of the direct dipolar and indirect electron-mediated nuclear spin interactions, by the…
The time-dependent Schrodinger equation of a many particle spin system consisting of an electron in a quantum dot interacting with the spins of the nuclei (N) in the dot due to hyperfine interaction is solved exactly for a given arbitrary…
We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By…
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the…
Encapsulated atomic hydrogen in cube-shaped octa-silsesquioxane (POSS) cages of the Si$_8$O$_{12}$R$_8$ type (where R is an organic group) is the simplest alternative stable system to paramagnetic endohedral fullerenes (N@C$_{60}$ or…
There is growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of…