Related papers: Spin-Orbit Engineering of Semiconductor Heterostru…
Two-dimensional semiconductor-superconductor heterostructures form the foundation of numerous nanoscale physical systems. However, measuring the properties of such heterostructures, and characterizing the semiconductor in-situ is…
Spin-orbit coupling (SOC) in noncentrosymmetric materials is the source of incommensurate magnetic structures. In semiconductors, it drives the Rashba spin splitting and spin momentum locking, while in magnetic insulators based on…
The spin degree of freedom is crucial for both understanding and exploiting the particular properties of the edges of two-dimensional topological insulators. In the absence of superconductivity and magnetism, Rashba coupling is the most…
We analyze theoretically the bound state spectrum of an Aharonov Bohm (AB) ring in a two-dimensional topological insulator using the four-band model of HgTe-quantum wells as a concrete example. We calculate analytically the circular helical…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
We have derived general boundary conditions (BC) for the multiband envelope functions (which do not contain spurious solutions) in semiconductor heterostructures with abrupt heterointerfaces. These BC require the conservation of the…
We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…
Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations…
We present Maxwell equations with source terms for the electromagnetic field interacting with a moving electron in a spin-orbit coupled semiconductor heterostructure. We start with the eight--band ${\bm k}{\bm p}$ model and derive the…
We study the electronic properties of a planar semiconductor-superconductor heterostructure, in which a thin ferromagnetic insulator layer lies in between and acts as a spin filtering barrier. We find that in such a system one can…
We map electron spin dynamics from time to space in quantum wires with spatially uniform and oscillating Rashba spin-orbit coupling. The presence of the spin-orbit interaction introduces pseudo-Zeeman couplings of the electron spins to…
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new…
We consider singular self-adjoint extensions for one-dimensional Schr\"{o}dinger operator for two-component wave function within the framework of the distribution theory for discontinuous test functions…
A topological superconductor features at its boundaries and vortices Majorana fermions, which are potentially applicable for topological quantum computations. The scarcity of the known experimentally verified physical systems with…
We present a numerical study of the density of states in a ferromagnet/superconductor junction and the Josephson current in a superconductor/ferromagnet/superconductor junction in the diffusive limit by solving the Usadel equation with…
We calculate the frequency dependent spin susceptibilities for a two-dimensional electron gas with both Rashba and Dresselhaus spin-orbit interaction. The resonances of the susceptibilities depends on the relative values of the Rashba and…
We explore the spin and charge properties of electrons in wurtzite semiconductor nanowires where radial and axial confinement leads to tubular or ring-shaped quantum structures. Accounting for spin-orbit interaction induced by the wurtzite…
We present the rational design scheme intended to provide the stable high spin-polarization at the interfaces of the magneto-resistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This…
A material whose electrons are correlated can affect electron dynamics across the interface with another material. Such a "proximity effect" can have several manifestations, from order parameter leakage to generated effective interactions.…
It is theoretically predicted that a traveling shear wave will create a spin current in certain direct-gap (for example III-V compound) semiconductors with contributions from both the valence bands and the conduction band (for $n$-doped…