Spin current as a response to external stress
Mesoscale and Nanoscale Physics
2007-05-23 v1 Materials Science
Abstract
It is theoretically predicted that a traveling shear wave will create a spin current in certain direct-gap (for example III-V compound) semiconductors with contributions from both the valence bands and the conduction band (for -doped semiconductors). We show that this spin-current is a property of the Fermi-Dirac sea, and is controlled by a geometric phase accumulated by the strain-induced Rashba parameters in a cycle.
Cite
@article{arxiv.cond-mat/0511270,
title = {Spin current as a response to external stress},
author = {Prashant Sharma},
journal= {arXiv preprint arXiv:cond-mat/0511270},
year = {2007}
}
Comments
5 pages and 2 figures in eps format