Related papers: Hole mobility increase in ultra-narrow Si channels…
Electron mobility, energy spectra and intrinsic carrier concentrations in the n-type Hg0.32Cd0.68Te / Hg1-xCdxTe / Hg0.32Cd0.68Te quantum well (QW) in semi-metallic state are numerically modeled. Energy spectra and wave functions were…
This paper presents experimental results about transport of dilute suspensions of nano-objects in silicon-glass micrometric and sub-micrometric channels. Two kinds of objects are used: solid, rigid latex beads and spherical capsule-shaped,…
Thermal transport in the Si/SiO$_2$ multishell nanotubes is investigated theoretically. The phonon energy spectra are obtained using the atomistic Lattice Dynamics approach. Thermal conductivity is calculated using the Boltzmann transport…
Two-dimensional 6,6,18-graphdiyne and the corresponding one-dimensional nanoribbons are investigated using crystal orbital method. Based on HSE06 functional, the one-dimensional confinement increases the band gaps. With band gaps larger…
Amorphous semiconductors are important channel semiconductors in thin film transistors (TFTs) which serve not only active-matrix displays, but also flexible electronics for Internet of Things (IoT) applications. Nevertheless, a great…
The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system,…
Heat transport in bulk materials is well described using the Debye theory of 3D vibrational modes (phonons) and the acoustic match model. However, in cryogenic nanodevices, phonon wavelengths exceed device dimensions, leading to confinement…
We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-P$\acute{e}$rot interference patterns as well as conductance plateaus at integer multiples of 2e$^2$/h at zero magnetic field.…
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…
Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band…
A modified phonon confinement model considering the size distribution, an improved phonon dispersion curve and a confinement function is developed for the calculation of size dependent Raman spectra of the silicon (Si) nanocrystals. The…
We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale…
We probe the accuracy limit of {\it ab initio} calculations of carrier mobilities in semiconductors, within the framework of the Boltzmann transport equation. By focusing on the paradigmatic case of silicon, we show that fully predictive…
We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 \mu m). Volume carrier density decreased with thickness,…
Boundary scattering in hierarchically disordered nanomaterials is an effective way to reduce the thermal conductivity of thermoelectric materials and increase their performance. In this work we investigate thermal transport in silicon based…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
Finite-difference time-domain method is employed to investigate the optical properties of semiconductor thin films patterned with circular holes. The presence of holes enhances the coupling of the incident plane wave with the thin film and…
We describe magnetotransport experiments performed on Hall crosses made from quantum wires at LaAlO3/SrTiO3 interfaces. Shubnikov-de Haas oscillations measured in a 14-nm wide structure exhibit modulations that are consistent with…
A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer…
The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At…