Related papers: Single-electron turnstile pumping with high freque…

In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…

We perform in-situ detection of individual electrons pumped through a single-electron turnstile based on ultrasmall normal metal - insulator - superconductor tunnel junctions. In our setup, limited by the detector bandwidth, at low…

The majority of experimental realizations of single-electron sources rely on the periodic manipulation of the tunnel junctions through their gate voltages, and thus require a high level of control over the system. To circumvent the…

Accuracy of single-electron currents produced in hybrid turnstiles at high operation frequencies is, among other errors, limited by electrons tunnelling in the wrong direction. Increasing the barrier transparency between the island and the…

The simplest mechanism for molecular electron pumps is discussed which is based on nonadiabatic electron tunnelling and nonequilibrium conformational fluctuations. Such fluctuations can be induced, e.g. by random binding of negatively…

We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the…

We investigate the distribution of waiting times between electrons emitted from a periodically driven single-electron turnstile. To this end, we develop a scheme for analytic calculations of the waiting time distributions for arbitrary…

In this Letter, we study the real-ime dynamics of single-electron pumpings. We modulate the left tunneling barrier along with the dot level but slightly changing the right barrier to operate the single-electron pumping device at zero bias.…

We present simultaneous operation of ten single-electron turnstiles leading to one order of magnitude increase in current level up to 100 pA. Our analysis of device uniformity and background charge stability implies that the parallelization…

We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an…

Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel…

We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a…

It has been predicted that in the presence of a sufficiently high-dissipative environment transport in a small tunnel junction can become extremely regular, giving rise to the phenomenon of single-electron tunneling oscillations. Recent…

The time-dependent transport through single-molecule magnets coupled to magnetic or non-magnetic electrodes is studied in the framework of the generalized master equation method. We investigate the transient regime induced by the periodic…

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…

We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million.…

Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic…

In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable…

We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential…