Related papers: Long hold times in a two-junction electron trap
We report on the operation of a single electron trap comprising a chain of four Al/AlOx/Al tunnel junctions attached, at one side, to a memory island and, at the other side, to a miniature on-chip Cr resistor R=50 kOhm which served to…
We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a…
Dissipative properties of the electromagnetic environment as well as on-chip RC filtering are shown to suppress random state switchings in the two-junction superconductor(S) - normal metal(N) electron trap. In our experiments, a local…
We demonstrate the operation of a dual-frequency Paul trap and characterize its performance by storing either electrons or calcium ions while applying two quadrupole fields simultaneously which oscillate at $\Omega_\textrm{fast} = 2\pi…
A single-electron trap built with two Superconductor (S) - Insulator (I) - Normal (N) metal tunnel junctions and coupled to a readout SINIS-type single-electron transistor A (SET A) was studied in a photon detection regime. As a source of…
In this work, we investigate the dynamics of a single electron surface trap, embedded in a self-assembly metallic double-dot system. The charging and discharging of the trap by a single electron is manifested as a random telegraph signal of…
We study the Coulomb pseudogap for tunneling into the two-dimensional electron system of high-mobility (Al,Ga)As/GaAs heterojunctions subjected to a quantizing magnetic field at filling factor $\nu \leq 1$. Tunnel current-voltage…
In the resonant tunneling regime sequential processes dominate single electron transport through quantum dots or molecules that are weakly coupled to macroscopic electrodes. In the Coulomb blockade regime, however, cotunneling processes…
The effect of electric field on the electron resonant tunnelling into a double barrier structure is studied. We show for particular field strengths an increase of the tunnelling time which leads us to explain the Stark-ladder localization…
In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I-V characteristics. We attribute its appearance to the unique topology of the array which induces…
A clear consensus on how long it takes a particle to tunnel through a potential barrier has never been so urgently required, since the electron dynamics in strong-field ionization can be resolved on attosecond time-scale in experiment and…
Tunneling ionization is characterized by a negative time delay, observed asymptotically as a specific shift of the photoelectron momentum distribution, which is caused by the interference of the sub-barrier recolliding and direct ionization…
The lifetime of Ba$^+$ ions confined in a Paul trap is found, under typical conditions, to be limited by chemical reactions with residual background gas. An integrated ion trap and time-of-flight mass spectrometer are used to analyze the…
Hybrid Superconductor/Ferromagnet structures have been investigated recently to address the interplay between ferromagnetism and superconductivity. They also open up new routes for the investigation of out of equilibrium superconductivity.…
Optically trapped ensembles are of crucial importance for frequency measurements and quantum memories, but generally suffer from strong dephasing due to inhomogeneous density and light shifts. We demonstrate a drastic increase of the…
We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects…
Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the…
We have observed trapping of electrons in an electrostatic trap formed over the surface of liquid helium-4. These electrons are detected by a Single Electron Transistor located at the centre of the trap. We can trap any desired number of…
A long-time quantum memory capable of storing and measuring quantum information at the single-qubit level is an essential ingredient for practical quantum computation and com-munication. Recently, there have been remarkable progresses of…
When a one dimensional (1D) ring-stub system is coupled to an electron reservoir, the states acquire a width (or broadening characterized by poles in the complex energy plane) due to finite life time effects. We show that this broadening is…