Related papers: Mobility-dependent Low-frequency Noise in Graphene…
We investigate electronic transport in twisted bilayer graphene (tBLG) under variable temperatures ($T$), carrier densities ($n$), and transverse magnetic fields, focusing on samples with small-twist-angles ($\theta$). These samples show…
Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces…
The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence,…
To verify the hypothesis about the common origin of the low frequency 1/f noise and the quantum f noise recently measured in the Josephson charge qubits, we study temperature dependence of the 1/f noise and decay of coherent oscillations.…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…
We describe the fundamental trade-offs in engineering the mobility, current saturation and ON- OFF ratios in graphene transistors. Surprisingly, the trade-offs arise solely from an asymptotic constraint on the high energy bandstructure and…
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using…
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The…
A mechanism of $1/f$ noise due to traps formed by impurities which have no neighbors with close energies in their vicinity is studied. Such traps slowly exchange electrons with the rest of conducting media. The concentration of traps and…
The fate of the charge-neutral Dirac point in graphene in a high magnetic field $H$ has been investigated at low temperatures ($T\sim$ 0.3 K). In samples with small $V_0$ (the gate voltage needed to access the Dirac point), the resistance…
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for…
The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while…
The electrical conductivity of suspended graphene has recently been measured for the first time, and found to behave as \sigma ~ \sqrt{|n|} as expected for Dirac quasiparticles at large carrier density. The charge inhomogeneity is strongly…
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in…
We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the…
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…