Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface

C. Barone; F. Romeo; S. Pagano; E. Di Gennaro; F. Miletto Granozio; I. Pallecchi; D. Marre; U. Scotti di Uccio

doi:10.1063/1.4838637

Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface

Strongly Correlated Electrons 2013-12-10 v1 Materials Science

Authors: C. Barone , F. Romeo , S. Pagano , E. Di Gennaro , F. Miletto Granozio , I. Pallecchi , D. Marre , U. Scotti di Uccio

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Abstract

The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas.

Keywords

two-dimensional electron gas LaAlO3/SrTiO3 interface voltage-spectral density 1/f noise resistance fluctuations Hooge model carrier-number fluctuations excitation-trapping mechanism

Cite

@article{arxiv.1312.2181,
  title  = {Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface},
  author = {C. Barone and F. Romeo and S. Pagano and E. Di Gennaro and F. Miletto Granozio and I. Pallecchi and D. Marre and U. Scotti di Uccio},
  journal= {arXiv preprint arXiv:1312.2181},
  year   = {2013}
}

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4 pages, 4 figures

Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface

Abstract

Keywords

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