Related papers: Triangulating tunneling resonances in a point cont…

We study many-body corrections to the cotunneling current via a localized state with energy $\epsilon_d$ at large bias voltages $V$. We show that the transfer of {\em electron pairs}, enabled by the Coulomb repulsion in the localized level,…

In spin qubit arrays the exchange coupling can be harnessed to implement two-qubit gates and to realize intermediate-range qubit connectivity along a spin bus. In this work, we propose a scheme to characterize the exchange coupling between…

For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that…

Tunnelling between two-dimensional electron systems has been studied in the magnetic field perpendicular to the systems planes. The satellite conductance peaks of the main resonance have been observed due to the electron tunnelling assisted…

Realizing quantum mechanical behavior in micro- and nanomechanical resonators has attracted continuous research effort. One of the ways for observing quantum nature of mechanical objects is via the mechanism of phonon blockade. Here, we…

We have studied the tunneling conductance in two dimensional electron gas / insulator / superconductor junctions in the presence of Rashba spin-orbit coupling (RSOC). It is found that for low insulating barrier the tunneling conductance is…

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…

We study the problem of resonant tunneling through a quantum dot in a spinful Luttinger liquid. For a range of repulsive interactions, we find that for symmetric barriers there exist resonances with a universal peak conductance $2g^* e^2/h$…

We study theoretically the linear conductance of a quantum dot connected to ferromagnetic leads. The dot level is split due to a non-collinear magnetic field or intrinsic magnetization. The system is studied in the non-interacting…

We study an interacting single-level quantum dot weakly coupled to three electrodes. When two electrodes are biased by voltages with opposite polarities, while keeping the third lead (the stem) grounded, the current through the stem is a…

We theoretically study a silicon triple quantum dot (TQD) system coupled to a superconducting microwave resonator. The response signal of an injected probe signal can be used to extract information about the level structure by measuring the…

We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…

We investigate the nonequilibrium transport properties of a three-terminal quantum dot in the strongly interacting limit. At low temperatures, a Kondo resonance arises from the antiferromagnetic coupling between the localized electron in…

We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are…

Coherent resonant tunneling through an artificial molecule of quantum dots in an inhomogeneous magnetic field is investigated using an extended Hubbard model. Both the multiterminal conductance of an array of quantum dots and the persistent…

Transport through molecular magnets is studied in the regime of strong coupling to the leads. We consider a resonant-tunneling model where the electron spin in a quantum dot or molecule is coupled to an additional local, anisotropic spin…

We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar…

Ensembles of bismuth donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times which exceed seconds. Operating an efficient quantum memory requires achieving critical coupling…

We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…

Nonlinear resonances in the classical phase space lead to a significant enhancement of tunneling. We demonstrate that the double resonance gives rise to a complicated tunneling peak structure. Such double resonances occur in Hamiltonian…