Related papers: Triangulating tunneling resonances in a point cont…
Designing high-finesse resonant cavities for electronic waves faces challenges due to short electron coherence lengths in solids. Previous approaches, e.g. the seminal nanometer-sized quantum corrals, depend on careful positioning of…
Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the…
We study the Coulomb pseudogap for tunneling into the two-dimensional electron system of high-mobility (Al,Ga)As/GaAs heterojunctions subjected to a quantizing magnetic field at filling factor $\nu \leq 1$. Tunnel current-voltage…
We study resonant tunneling through a single-level quantum dot in the presence of strong Coulomb repulsion beyond the perturbative regime. The level is either spin-degenerate or can be split by a magnetic field. We, furthermore, discuss the…
In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si1-xGex body with a compositionally graded Si1-xGex…
We have studied the electron transport through a quantum dot coupled to three leads in the presence of external microwave fields supplied to different parts of the considered mesoscopic system. Additionally, we introduced a possible…
A scheme for coupling superconducting charge qubits via a one-dimensional superconducting transmission line resonator is proposed. The qubits are working at their optimal points, where they are immune to the charge noise and possess long…
We study phonon-assisted electron tunneling in semiconductor quantum dot molecules. In particular, singlet-singlet relaxation in a two-electron doped structure is considered. The influence of Coulomb interaction is discussed via comparison…
In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the…
In the model of gate-based quantum computation, the qubits are controlled by a sequence of quantum gates. In superconducting qubit systems, these gates can be implemented by voltage pulses. The success of implementing a particular gate can…
We prove an exact duality between the side-coupled and embedded geometries of a single level quantum dot attached to a quantum wire in a Luttinger liquid phase by a tunneling term and interactions. This is valid even in the presence of a…
We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nanoribbons. A rich structure of resonant tunneling peaks are found eminating from different quasi-bound states in the middle region. The…
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD…
This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative…
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…
Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its…
Two-qubit quantum gates play an essential role in quantum computing, whose operation critically depends on the entanglement between two qubits. Resonantly driven controlled-NOT (CNOT) gates based on silicon double quantum dots (DQDs) are…
We develop the concept of scattering matrix and we use it to perform stable numerical calculations of resonant tunneling of electrons through a multiple potential barrier in a semiconductor heterostructure. Electrons move in two external…
A quantum dot weakly coupled to two normal metal leads exhibits resonant transmission when one of the dot energy levels lies within the applied bias window. But when the quantum dot is sidecoupled to the transport channel, transmission in…
Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous…