Related papers: Highly luminescent a-SiOx<Er>/SiO2/Si multilayer s…
In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $\overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by…
On-chip photonic devices based on SiO$_2$ are of interest for applications such as microresonator gyroscopes and microwave sources. Although SiO$_2$ microdisk resonators have achieved quality factors exceeding one billion, this value…
The article reports on light enhancement by structural resonances in linear periodic arrays of identical dielectric elements. As the basic elements both spheres and rods with circular cross section have been considered. In either case, it…
The structural interface properties of layered Pt/Ti/SiO2/Si electrodes have been investigated using high-resolution specular and diffuse x-ray reflectivity under grazing angles. Currently this multilayer system represents a technological…
We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 mm radius spot-size. The total shift is…
We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…
We present a joint experimental and theoretical study of the superconducting phase of the layered binary silicide BaSi2. Compared with the layered AlB2 structure of graphite or diboride-like superconductors, in the hexagonal structure of…
In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma-ray irradiation. The wavelengths of both micro-ring…
The electronic, laser-induced fluorescence spectrum of the $B^2\Sigma^+\leftarrow X^2\Sigma^+$ transition in $^{28}$Si$^{16}$O$^+$ and $^{29}$Si$^{16}$O$^+$ has been recorded in a cryogenic buffer gas cell at $\approx$ 100 K. Molecular…
Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the…
Silicon thin films for coverages ($\theta$) between 0.3 and 3 monolayers have been grown on rutile \ce{TiO2}(110)-(1x1) at room temperature and studied by x-ray and ultra-violet photoelectron spectroscopies, Auger electron spectroscopy, and…
The ability to engineer localized surface plasmon resonances at large scale usually relies on precise nanoscale patterning. Here, we demonstrate that mid-infrared plasmonic responses can instead emerge in unpatterned polysilicon films…
Efficient anti-reflection coatings (ARC) improve the light collection and thereby increase the current output of solar cells. By simple electrochemical etching of the Si wafer, porous silicon (PS) layers with excellent broadband…
In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show…
The inclusion of semiconducting material within a composite barrier enables the perfectly uniform propagation of surface ionization waves (SIW) in air at atmospheric pressure regardless of the polarity of the applied electric field, unlike…
Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9…
Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to…
Silicon vacancies ($V_\mathrm{Si}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor platforms. However, conventional CMOS-compatible processing…
The evolution is presented of infrared transmission spectra of hydrogenated and chlorinated amorphous silicon films versus the chlorine concentration and the annealing temperature. As the chlorine content increases, an increase of the 2100…
Photoluminescence (PL) and Raman spectra of sol-gel-derived silica glasses were studied in course of the consolidation of xerogel to dense glass. A number of ultraviolet PL bands in 3 eV - 4 eV region were found, which have not been…