Related papers: Highly luminescent a-SiOx<Er>/SiO2/Si multilayer s…
The ability to tune the wavelength of light emission on a silicon chip is important for scalable photonic networks, distributed photonic sensor networks and next generation computer architectures. Here we demonstrate light emission in a…
Monolayer transition metal dichalcogenides have emerged as promising materials for optoelectronic and nanophotonic devices. However, the low photoluminescence (PL) quantum yield (QY) hinders their various potential applications. Here we…
Second-harmonic generation (SHG) is a second-order nonlinear optical process that is not allowed in media with inversion sym-metry. However, due to the broken symmetry at the surface, surface SHG still occurs, but is generally small. We…
A high quality amorphous silicon (a-Si) nanostructures has grown experimentally to study the origin of light emission and the quantum confinement effect in a-Si. The quantum confinement effect increases the band gap of material as the size…
A source of ultrashort pulses of light in the 2 {\mu}m region was constructed using supercontinuum broadening from an erbium mode-locked laser. The output spectrum spanned 1000 nm to 2200 nm with an average power of 250 mW. A pulse width of…
Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to…
The photoluminescence (PL) spectra of Ar-ion irradiated single crystals of SrTiO3 (STO) excited by the 325 nm line of a He-Cd laser are compared with those of pristine crystals, epitaxial films, and amorphous layers of STO at several…
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the…
We have studied the temperature dependencies of the photoluminescence (PL) intensity of 4.1 eV in microcrystalline powder of hexagonal boron nitride in the range of 7-1100 K. The results obtained have been analyzed within the band model of…
We report a methodology to determine the quality factor ($Q$) in implementations of the so-called dielectric haloscope, a new concept of wavy dark matter detector equipped with a multilayered resonator. An anechoic chamber enables the…
We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A…
The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from…
Systematic exploration of amorphous ABC heterostructures revealed that nanoscale morphological modifications markedly improved their artificial bulk second-order susceptibility. These amorphous birefringent heterostructures were fabricated…
The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of a dielectric layer with different thickness leads to…
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is…
The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound states in the…
Future quantum networks in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a…
One-dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 um is studied at cryogenic and room temperatures at different optical pump…
We report, for the first time, the luminescence property of the hydroxyl group surface functionalized quantum dots (QDs) and nanoparticles (NPs) of SnO_2 using low energy excitations of 2.54 eV (488 nm) and 2.42 eV (514.5 nm). This…
Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD)…