Related papers: Pauli spin blockade in undoped Si/SiGe two-electro…
We prepare a triple quantum dot with a separate contact lead to each dot to study Pauli spin blockade in the tunnel-coupled three dots in a row. We measure the tunneling current flowing between the center dot and either the left or right…
We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple…
Recent breakthroughs in the transport spectroscopy of 2-D material quantum-dot platforms have engendered a fervent interest in spin-valley qubits. In this context, Pauli blockades in double quantum dot structures form an important basis for…
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…
Pauli spin blockade in quantum dot systems occurs when the charge transport is allowed only for some spin states, and it has been an efficient tool in spin-based qubit devices in semiconductors. We theoretically investigate a Pauli spin…
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with…
We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to…
In this letter, we present fast readout of Pauli spin blockade phenomena and interdot coupling tunability in a silicon double quantum dot (DQD) fabricated using industry-compatible processes. The interdot couplings are tuned with a second…
Recent experimental observations of current blockades in 2-D material quantum-dot platforms have opened new avenues for spin and valley-qubit processing. Motivated by experimental results, we construct a model capturing the delicate…
Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1)…
We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli…
We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state…
A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin…
Pauli blockade is a fundamental quantum phenomenon that also serves as a powerful tool for qubit manipulation and read-out. While most systems exhibit a simple even-odd pattern of double-dot Pauli spin blockade due to the preferred singlet…
Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a…
Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we…
We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an…