Related papers: Effective Mass and Spin Susceptibility of Dilute T…
We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the…
We measure the effective mass in a dilute two-dimensional electron system in (111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass…
We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse…
Cyclotron resonance at microwave frequencies is used to measure the band mass (m_b) of the two-dimensional holes (2DH's) in carbon-doped (100) GaAs/AlxGa1-xAs heterostructures. The measured m_b shows strong dependences on both the 2DH…
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$…
The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system…
In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective…
We show that a strong `spin'-orbit coupled one-dimensional (1D) hole gas is achievable via applying a strong magnetic field to the original two-fold degenerate (spin degeneracy) hole gas confined in a cylindrical Ge nanowire. Both strong…
The effective g-factor ($g^{*}$) of a dilute interacting two-dimensional electron system is expected to increase with respect to its bare value as the density is lowered, and to eventually diverge as the system makes a transition to a…
We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi…
We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces. Shubni…
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in…
We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45$\AA$ wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to…
The low-energy effective Hamiltonian of the strong `spin'-orbit coupled one-dimensional hole gas in a cylindrical Ge nanowire in the presence of a strong magnetic field is studied both numerically and analytically. Basing on the…
We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a…
We have studied quantum-well-confined holes based on the Luttinger-model description for the valence band of typical semiconductor materials. Even when only the lowest quasi-two-dimensional (quasi-2D) subband is populated, the static spin…
The results of experimental study of the magnetoresistivity, the Hall and Shubnikov-de Haas effects for the heterostructure with HgTe quantum well of 20.2 nm width are reported. The measurements were performed on the gated samples over the…
We determine the spin susceptibility $\chi$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully…