English

Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region

Mesoscale and Nanoscale Physics 2007-05-23 v1

Abstract

We determine the spin susceptibility χ\chi in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, χ\chi decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4×1011cm24\times10^{11} cm^{-2}. In the high density limit, χ\chi tends correctly towards χ1\chi\to 1 and compare well with recent theory.

Keywords

Cite

@article{arxiv.cond-mat/0511668,
  title  = {Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region},
  author = {Y. -W. Tan and J. Zhu and H. L. Stormer and L. N. Pfeiffer and K. W. Baldwin and K. W. West},
  journal= {arXiv preprint arXiv:cond-mat/0511668},
  year   = {2007}
}

Comments

Submitted to Physical Review B