Related papers: Controlled coupling of spin-resolved quantum Hall …
The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a…
The edges of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime are divided into alternating metallic and insulating strips, with their widths determined by the energy gaps of the QHE states and the electrostatic…
Quantum spin Hall (QSH) insulators are materials that feature an insulating bulk and host edge states protected by time-reversal symmetry. The helical locking of spin and momentum in these states suppresses backscattering of charge…
The effect of surface disorder on electronic systems is particularly interesting for topological phases with surface and edge states. Using exact diagonalization, it has been demonstrated that the surface states of a 3D topological…
Atomically thin topological materials are attracting growing attention for their potential to radically transform classical and quantum electronic device concepts. Amongst them is the quantum spin Hall (QSH) insulator - a two-dimensional…
In two-dimensional higher-order topological insulators, the corner states are separated by a non-negligible distance. The crystalline symmetries protect the robustness of their corner states with long-range entanglement, which are robust…
Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of…
We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of…
To harness the true potential of topological insulators as quantum materials for information processing, it is imperative to maximise topological surface state conduction, while simulateneously improving their quantum coherence. However,…
We theoretically manifest that the edge of a quantum spin Hall insulator (QSHI), attached to an insulating ferromagnet (FM), can realize a highly efficient spin-to-charge conversion. Based on a one-dimensional QSHI-FM junction, the electron…
The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films…
We observe nearly vanishing Hall resistances for integer filling factors in a counterflow (CF) experiment on a density balanced 2D bilayer system. Filling factor dependent equilibration lengths demonstrate enhanced 1D coupling via…
Using exact diagonalization we study the low energy Hilbert space of the two-electron, two-quantum dot artificial molecule under a perpendicular magnetic field. We show that electrons bind to vortices to induce several spin transitions…
The helical edge states of time-reversal invariant two-dimensional topological insulators are protected against backscattering in idealized models. In more realistic scenarios with a shallow confining potential at the sample boundary,…
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently…
A promising approach to attain long-distance coherent spin propagation is accessing topological spin-polarized edge states in graphene. Achieving this without external magnetic fields necessitates engineering graphene band structure,…
Robust quantum state transfer (QST) is an indispensable ingredient in scalable quantum information processing. Here we present an experimentally feasible mechanism for realizing robust QST via topologically protected edge states in…
Quantum spin Hall insulators are characterized by topologically protected counterpropagating edge states. Here we study the dynamical response of these helical edge states under a time-dependent flux biasing, in the presence of a heat bath.…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
The hybridization gap in strained-layer InAs/InxGa1-xSb quantum spin Hall insulators (QSHIs) is significantly enhanced compared to binary InAs/GaSb QSHI structures, where the typical indium composition, x, ranges between 0.2 and 0.4. This…