Related papers: Enhancement-mode buried strained silicon channel q…
Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control.…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
Silicon quantum dots are one of the most promising candidates for practical quantum computers because of their scalability and compatibility with the well-established complementary metal-oxide-semiconductor technology. However, the…
We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed.…
We propose a novel scheme of solid state realization of a quantum computer based on single spin "enhancement mode" quantum dots as building blocks. In the enhancement quantum dots, just one electron can be brought into initially empty dot,…
Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are…
We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The…
Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam…
We study transport through a quantum dot in the fractional quantum Hall regime with filling factors \nu=2/3 and \nu=5/2, weakly coupled to the leads. We account for both injection of electrons to/from the leads, and quasiparticle…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for…
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this article, we present our results on…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
Ge/SiGe heterostructures represent a promising platform for hosting various quantum devices such as hole spin qubits and Andreev spin qubits. However, the compatibility of such heterostructures with high-quality-factor microwave…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…