Related papers: Voltage controlled terahertz transmission through …
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…
We report a terahertz optical modulator consisting of randomly stacked trilayer graphene (TLG) deposited on an oxidized silicon substrate by means of THz- Time Domain Spectroscopy (THz-TDS). Here, the gate tuning of the Fermi level of the…
We experimentally demonstrate the production of narrow-band ($\delta f/f \simeq20$% at $f\simeq 0.5$ THz) THz transition radiation with tunable frequency over [0.37, 0.86] THz. The radiation is produced as a train of sub-picosecond…
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs is researched. The problem is…
We study terahertz transmission through nano-patterned vanadium dioxide thin film. It is found that the patterning allows the lowering of the apparent transition temperature. For the case of the smallest width nano antennas, the transition…
High-energy terahertz pulses are challenging to produce due to the low conversion efficiency and limited optical damage threshold of nonlinear crystals. Here, we describe the high-efficiency generation of terahertz radiation pulses with…
When subjected to electromagnetic radiation, the fluctuation of the electronic current across a quantum conductor increases. This additional noise, called photon-assisted shot noise, arises from the generation and subsequent partition of…
Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates…
This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for…
We have studied the optical and electrical spectra from an n i p LED as a function of magnetic field. This sample incorporated three GaAs quantum wells in the intrinsic region. This device had excess n type doping and as a result. The…
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas…
Dynamics of plasmons in nanoribbons of (hydrogen intercalated) quasi-free-standing single layer graphene is studied by terahertz spectroscopy both in the steady state and upon photoexcitation by an ultrashort near infrared laser pulse. The…
We theoretically study the electronic transport of a nanowire partly irradiated under an external terahertz (THz) electromagnetic field. Although the electrons in the ballistic nanowires only suffer lateral collision with photons the…
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
With abundant bandwidth resource, the Terahertz band (0.1~THz to 10~THz) is envisioned as a key technology to realize ultra-high data rates in the 6G and beyond mobile communication systems. However, moving to the THz band, existing channel…
We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical…
GaMnAs thin films with different Mn doping concentrations were grown via molecular beam epitaxy using a substrate temperature of 250 {\deg}C. The thin films were investigated using photoluminescence (PL) measurements from 8 to 300 K.…
The Terahertz frequency range bears intriguing opportunities, beyond very advanced applications in spectroscopy and matter control. Peculiar quantum phenomena are predicted to lead to light emission by non-trivial mechanisms. Typically,…