Related papers: Voltage controlled terahertz transmission through …
The organic terahertz (THz) generation crystal BNA has recently gained traction as a valuable source to produce broadband THz pulses. Even when pumped with 800-nm light, thin BNA crystals can produce relatively high electric fields with…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
The unique terahertz properties of graphene has been identified for novel optoelectronic applications. In a graphene sample with bias voltage added, there is an enhanced absorption in the far infrared region and a diminished absorption in…
We consider a periodically gated two-dimensional electron system, with a central gate finger biased independently creating a tunable plasmonic cavity in a planar plasmonic crystal. We demonstrate that the plasmons resonantly excited in the…
We numerically analyse extraordinary terahertz transmission properties of an array of rectangular shaped apertures perforated periodically on a thin metal film. The apertures are tapered at different angles to achieve higher field…
We demonstrate a Terahertz photomixer pumped by mid-infrared photons at 10$\mu$m wavelength. The device is based on a dual-antenna architecture, in which a two-dimensional array of mid-infrared patch-antenna resonators is connected to the…
V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of…
We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an…
We compare the observed strong saturation of the free carrier absorption in n-type semiconductors at 300 K in the terahertz frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a…
This is a brief overview of the main physical ideas for application of field effect transistors for generation and detection of TeraHertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the…
Room temperature Terahertz stimulated emission and population inversion in optically pumped graphene is reported. We experimentally observe fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an…
The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled…
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
We report a highly efficient tunable THz reflector in graphene. By applying a small gate voltage (up to 3 V), the reflectance of graphene is modulated from a minimum of 0.79% to a maximum of 33.4% using graphene/ionic liquid structures at…
Graphene is conceivably the most nonlinear optoelectronic material. Its nonlinear optical coefficients in the terahertz (THz) frequency range surpass those of other materials by many orders of magnitude. This, in particular, allows one to…
Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of…
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW…
It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling…
Growth of GaMnAs by molecular beam epitaxy is typically performed at low substrate temperatures (250C) and high As overpressures leading to the incorporation of excess As and Mn interstitials, which quench optical signals such as…