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Due to the static magnetic field, the conductivity for graphene becomes a dispersive and anisotropic tensor, which complicates most modeling methodologies. In this paper, a novel equivalent circuit model is proposed for graphene with the…
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the…
The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and…
We study the energy spectrum and persistent current of charge carriers confined in a graphene quantum ring geometry of radius $R$ and width $w$ subjected to a magnetic flux. We consider the case where the crystal symmetry is locally…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…
The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene…
Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on…
We use linear-response theory to evaluate the frequency-dependent conductivity of a system subject to a continuous quantum measurement of the current. Application of this formalism to graphene yields a consistent framework for discussing…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
To construct Lagrangian based on plate theory and tight-binding model, deflection-field coupling to Dirac fermions in graphene can be investigated. As have been known, deflection-induced strain may cause an effect on the motion of the…
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of…
Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities…
The independence of the dynamic conductivity of intrinsic graphene of frequency takes its origin in the compensation of the vanishing density of states by the diverging matrix element of the corresponding interband transition. The…
We study the propagation of electrons in a circular quantum dot of gapped graphene subject to the magnetic flux $\phi$. We present analytical expressions for the eigenstates, scattering coefficients, scattering efficiency and radial…
Motivated by recent proposals on strain-engineering of graphene electronic circuits we calculate conductivity, shot-noise and the density of states in periodically deformed graphene. We provide the solution to the Dirac-Kronig-Penney model,…
In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are…
Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…
This paper reviews the theoretical work undertaken using density functional theory (DFT) to explore graphene's interactions with its surroundings. We look at the impact of substrates, gate dielectrics and edge effects on the properties of…
This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density. The analytical derivation relies on a first-order correction…