Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices

Gennady I. Zebrev; Evgeny V. Melnik; Daria K. Batmanova

Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices

Mesoscale and Nanoscale Physics 2012-02-03 v2

Authors: Gennady I. Zebrev , Evgeny V. Melnik , Daria K. Batmanova

Abstract

Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed.

Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices

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