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The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…

Instrumentation and Detectors · Physics 2014-10-10 Ran Wang , Yating Zhang , Haiyang Wang , Xiaoxian Song , Lufan Jin , Haitao Dai , Sen Wu , Jianquan Yao

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by…

Mesoscale and Nanoscale Physics · Physics 2016-12-21 Mircea Dragoman , Adrian Dinescu , Daniela Dragoman

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the…

The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…

Mesoscale and Nanoscale Physics · Physics 2009-09-03 X. Hong , A. Posadas , K. Zou , C. H. Ahn , J. Zhu

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

Mesoscale and Nanoscale Physics · Physics 2014-04-03 Viet Hung Nguyen , Huy Viet Nguyen , Philippe Dollfus

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…

Materials Science · Physics 2015-05-14 G. Liu , W. Stillman , S. Rumyantsev , Q. Shao , M. Shur , A. A. Balandin

Graphene hosts a unique electron system in which electron-phonon scattering is extremely weak but electron-electron collisions are sufficiently frequent to provide local equilibrium above liquid nitrogen temperature. Under these conditions,…

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain…

Mesoscale and Nanoscale Physics · Physics 2015-05-28 E. Pallecchi , C. Benz , A. C. Betz , H. v. Löhneysen , B. Plaçais , R. Danneau

Liquid-based bio-applications of graphene require a quantitative understanding of the graphene-liquid interface, with the surface charge density of adsorbed ions, the interfacial charge transfer resistance, and the interfacial charge noise…

Mesoscale and Nanoscale Physics · Physics 2017-08-31 Jinglei Ping , A. T. Charlie Johnson

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…

Mesoscale and Nanoscale Physics · Physics 2015-02-25 Biddut K. Sarker , Isaac Childres , Edward Cazalas , Igor Jovanovic , Yong P. Chen

Graphene is only one atom thick, optically transparent, chemically inert and an excellent conductor. These properties seem to make this material an excellent candidate for applications in various photonic devices that require conducting but…

Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive…

Mesoscale and Nanoscale Physics · Physics 2017-03-08 François Léonard , Catalin D. Spataru , Michael Goldflam , David W. Peters , Thomas E. Beechem

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for…

Materials Science · Physics 2009-11-17 Damon B. Farmer , Hsin-Ying Chiu , Yu-Ming Lin , Keith A. Jenkins , Fengnian Xia , Phaedon Avouris

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…

Mesoscale and Nanoscale Physics · Physics 2009-11-25 Max C. Lemme

A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…

Materials Science · Physics 2007-07-23 Y. G. Semenov , K. W. Kim , J. M. Zavada

Advances in techniques for monitoring pH in complex fluids could have significant impact on analytical and biomedical applications ranging from water quality assessment to in vivo diagnostics. We developed flexible graphene microelectrodes…

Graphene is a single layer of carbon atoms arranged in a honeycomb lattice with remarkable mechanical and electrical properties. Regarded as the thinnest and narrowest conductive mesh, it has drastically different transmission behaviours…

The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in…

Superconductivity · Physics 2014-02-04 A. Ballestar , P. Esquinazi , J. Barzola-Quiquia , S. Dusari , F. Bern , R. R. da Silva , Y. Kopelevich

Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…

We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson…