The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage (Vg) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density (n) in the sample near surface region and under different values of Vg at room temperature. Transport measurements on different MLG samples reveal that under a large enough applied electric field these regions undergo a superconducting-like transition at T≲17 K. A magnetic field applied parallel or normal to the graphene layers suppresses the transition without changing appreciably the transition temperature.
@article{arxiv.1202.3327,
title = {Possible superconductivity in multi-layer-graphene by application of a gate voltage},
author = {A. Ballestar and P. Esquinazi and J. Barzola-Quiquia and S. Dusari and F. Bern and R. R. da Silva and Y. Kopelevich},
journal= {arXiv preprint arXiv:1202.3327},
year = {2014}
}
Comments
21 pages, 8 figures, will be published in Carbon (in press, 2014)