Related papers: Characterizing top gated bilayer graphene interact…
We present a systematic Raman study of unconventionally-stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity…
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances…
We present a systematic study of the Raman spectra of optical phonons in graphene monolayers under tunable uniaxial tensile stress. Both the G and 2D bands exhibit significant red shifts. The G band splits into two distinct sub-bands (G+,…
A theory of electronic Raman scattering in the presence of several energy bands crossing the Fermi surface is developed. The contributions to the light scattering cross section are calculated for each band and it is shown that the cross…
We present a theoretical study of the local optical conductivity, plasmon spectra, and thermoelectric properties of twisted bilayer graphene (TBG) at different filling factors and twist angles $\theta$. Our calculations are based on the…
Raman spectroscopy has become an essential technique to characterize and investigate graphene and many other two-dimensional materials. However, there still lacks consensus on the Raman signature and phonon dispersion of atomically thin…
The semimetal NbIrTe4 has been proposed to be a Type-II Weyl semimetal with 8 pairs of opposite Chirality Weyl nodes which are very close to the Fermi energy. This topological electronic structure is made possible because of the broken…
The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while…
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy.…
We present a double-resonant Raman mode in few-layer graphene, which is able to probe the number of graphene layers reliably. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes/anti-Stokes…
In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle $\theta$. We…
We investigate the signature of the low-energy electronic excitations in the Raman spectrum of monolayer and bilayer graphenes. The dominant contribution to the Raman spectra is due to the interband electron-hole pairs, which belong to the…
The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…
We calculate the single-particle spectral function for doped bilayer graphene in the low energy limit, described by two parabolic bands with zero band gap and long range Coulomb interaction. Calculations are done using thermal Green's…
We consider quantum interference effects in carrier and photocurrent excitation in graphene using coherent electromagnetic field components at frequencies $\omega$ and $2\omega$. The response of the material at the fundamental frequency…
The tight-binding model is closely associated with the modified layer-based random-phase approximation to thoroughly investigate the electron-electron interactions in sliding bilayer graphene. The Coulomb interactions and intralayer and…
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…
Resonance Raman scattering, which probes electrons, phonons and their interplay in crystals, is extensively used in two-dimensional materials. Here we investigate Raman modes in MoSe$_2$ at different laser excitation energies from 2.33 eV…
The electron-phonon matrix elements relevant to the Raman intensity and Kohn anomaly of the G band are calculated by taking into account the effect of the edge of graphene. The analysis of the pseudospin reveals that the longitudinal…