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We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently…
Single photons are resources needed for developing quantum networks QN. They distribute quantum information services across commercial optical fiber links and are key ingredient in developing quantum repeaters architectures. Currently, the…
This study investigates the performance of droplet-etched GaAs quantum dots (QDs) integrated into micropillar structures using a deterministic fabrication technique. We demonstrate a unity QD positioning yield across 74 devices and…
GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scalable quantum photonics. However, ultrathin axial…
III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical…
We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the optical quality or…
We report the possibility to generate tremendous light-field enhancements within shallow nano-trenches made in a high index dielectric material, because of resonant behaviours reminiscent of what we get with sub-wavelength plasmonic…
Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…
Engineering the directionality and emission rate of quantum light sources is essential in the development of modern quantum applications.In this work we use numerical calculations to optimize the brightness of a broadband quantum emitter…
Micro/nanoscale single photon source is a building block of on-chip quantum information devices. Owing to possessing ultrasmall optical mode volume, plasmon structures can provide large Purcell enhancement, however scattering and absorption…
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and…
Planar nanostructures allow near-ideal extraction of emission from a quantum emitter embedded within, thereby realizing deterministic single-photon sources. Such a source can be transformed into M single-photon sources by implementing…
Fiber-based bidirectional photon extraction from nanoscale emitters and photon antibunching behavior between two outputs of two single mode optical fibers are experimentally demonstrated. Flakes of the epitaxial layer containing the InAs…
Efficient interconnection between distant semiconductor spin qubits with the help of photonic qubits would offer exciting new prospects for future quantum communication applications. In this paper, we optimize the extraction efficiency of a…
We present a technique capable of producing subwavelength focal spots in the far-field of the source in planar non-resonant structures. The approach combines the diffraction gratings that generate the high-wavevector-number modes and planar…
Scalable photonic quantum technologies require on-demand single-photon sources with simultaneously high levels of purity, indistinguishability, and efficiency. These key features, however, have only been demonstrated separately in previous…
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate…
We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of…
We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate…
In this work we develop and study single-photon sources based on InGaAs quantum dots (QDs) emitting in the telecom O-band. The quantum devices are fabricated using in-situ electron beam lithography in combination with the thermocompression…