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Hereby, we present results of finite-difference time-domain simulations of technologically undemanding photonic structures offering a significant improvement in the spectrally broad extraction efficiency of emission from a quantum emitter…

Mesoscale and Nanoscale Physics · Physics 2019-05-01 Paweł Mrowiński , Grzegorz Sęk

On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive…

Bright single photon emission from single quantum dots in suspended circular Bragg grating microcavities is demonstrated. This geometry has been designed to achieve efficient (> 50 %) single photon extraction into a near-Gaussian shaped…

Quantum Physics · Physics 2013-03-08 Serkan Ates , Luca Sapienza , Marcelo Davanco , Antonio Badolato , Kartik Srinivasan

Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match…

Purcell-enhanced quantum dot single-photon emission in the telecom C-band from InAs quantum dots inside circular Bragg grating cavities is shown. The InAs quantum dots are grown by means of molecular beam epitaxy on an InP substrate and are…

The combination of semiconductor quantum dots (QDs) with photonic cavities is a promising way to realize non-classical light sources with state-of-the-art performances in terms of brightness, indistinguishability and repetition rate. In the…

Epitaxial III-V semiconductor quantum dots in nanopthonic structures are promising candidates for implementing on-demand indistinguishable single-photon emission in integrated quantum photonic circuits. Quantum dot proximity to the etched…

III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving…

Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…

Mesoscale and Nanoscale Physics · Physics 2015-08-06 Luca Sapienza , Marcelo Davanco , Antonio Badolato , Kartik Srinivasan

Semiconductor quantum dots embedded in hybrid circular Bragg gratings are a promising platform for the efficient generation of nonclassical light. The scalable fabrication of multiple devices with similar performance is highly desirable for…

A bright source of on-demand entangled photons is needed for quantum networks. A single quantum dot in a site-selected nanowire waveguide is a promising candidate for realizing such sources. However, such sources are associated with poor…

Quantum Physics · Physics 2026-01-09 Sayan Gangopadhyay , Sasan V. Grayli , Sathursan Kokilathasan , Michael E. Reimer

We have designed and fabricated a shallow-etched grating on gallium arsenide nanomembranes for efficient chip-to-fiber coupling in quantum photonic integrated circuits. Experimental results show that the grating provides a fiber-coupling…

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…

The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…

Deterministic and bright quantum light sources based on scalable semiconductor technologies are a crucial building block for future quantum communication networks. While circular Bragg gratings (CBGs) are highly effective for extracting…

We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…

Mesoscale and Nanoscale Physics · Physics 2023-11-28 Imad Limame , Peter Ludewig , Ching-Wen Shih , Marcel Hohn , Chirag C. Palekar , Wolfgang Stolz , Stephan Reitzenstein

The development of efficient sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm is crucial for long-distance quantum communication. Moreover, direct fiber coupling and electrical…

The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range.…

Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could…

We analyze a single photon source consisting of an InAs quantum dot coupled to a directional-emission photonic crystal (PC) cavity implemented in GaAs. On resonance, the dot's lifetime is reduced by more than 10 times, to 45ps. Compared to…

Quantum Physics · Physics 2015-05-13 Mitsuru Toishi , Dirk Englund , Andrei Faraon , Jelena Vuckovic
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