We analyze a single photon source consisting of an InAs quantum dot coupled to a directional-emission photonic crystal (PC) cavity implemented in GaAs. On resonance, the dot's lifetime is reduced by more than 10 times, to 45ps. Compared to the standard three-hole defect cavity, the perturbed PC cavity design improves the collection efficiency into an objective lens (NA=0.75) by factor 6, and improves the coupling efficiency of the collected light into a single mode fiber by factor 1.9. The emission frequency is determined by the cavity mode, which is antibunched to g(2)=0.05. The cavity design also enables efficient coupling to a higher-order cavity mode for local optical excitation of cavity-coupled quantum dots.
@article{arxiv.0904.1262,
title = {High-brightness single photon source from a quantum dot in a directional-emission nanocavity},
author = {Mitsuru Toishi and Dirk Englund and Andrei Faraon and Jelena Vuckovic},
journal= {arXiv preprint arXiv:0904.1262},
year = {2015}
}